| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| 5202CS12Z 5202CS21 |
5 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
| SFH462 |
4.19 mm, 1 ELEMENT, INFRARED LED, 660 nm
|
Infineon Technologies AG
|
| QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|
| OPU852CP |
6 mm, 1 ELEMENT, INFRARED LED, 910 nm
|
OKI ELECTRIC INDUSTRY CO LTD
|
|
